JPS55146964A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55146964A
JPS55146964A JP4547780A JP4547780A JPS55146964A JP S55146964 A JPS55146964 A JP S55146964A JP 4547780 A JP4547780 A JP 4547780A JP 4547780 A JP4547780 A JP 4547780A JP S55146964 A JPS55146964 A JP S55146964A
Authority
JP
Japan
Prior art keywords
type
layer
region
embedded
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4547780A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5643615B2 (en]
Inventor
Osamu Ozawa
Koichi Kanzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4547780A priority Critical patent/JPS55146964A/ja
Publication of JPS55146964A publication Critical patent/JPS55146964A/ja
Publication of JPS5643615B2 publication Critical patent/JPS5643615B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10D84/658—Integrated injection logic integrated in combination with analog structures

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
JP4547780A 1980-04-07 1980-04-07 Manufacture of semiconductor device Granted JPS55146964A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4547780A JPS55146964A (en) 1980-04-07 1980-04-07 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4547780A JPS55146964A (en) 1980-04-07 1980-04-07 Manufacture of semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP11921776A Division JPS5344186A (en) 1976-10-04 1976-10-04 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS55146964A true JPS55146964A (en) 1980-11-15
JPS5643615B2 JPS5643615B2 (en]) 1981-10-14

Family

ID=12720468

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4547780A Granted JPS55146964A (en) 1980-04-07 1980-04-07 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55146964A (en])

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6228616U (en]) * 1985-08-07 1987-02-21
JPS641038U (en]) * 1987-06-16 1989-01-06

Also Published As

Publication number Publication date
JPS5643615B2 (en]) 1981-10-14

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